硅和锗纳米线的原子排布和电荷分布的密度泛函紧束缚方法研究

低维硅锗材料是制备纳米电子器件的重要候选材料，是研发高效率、低能耗和超高速新一代纳米电子器件的基础材料之一，有着潜在的应用价值。采用密度泛函紧束缚方法分别对厚度相同、宽度在0.272 nm~0.554 nm之间的硅纳米线和宽度在0.283 nm~0.567 nm之间的锗纳米线的原子排布和电荷分布进行了计算研究。硅、锗纳米线宽度的改变使原子排布，纳米线的原子间键长和键角发生明显改变。纳米线表层结构的改变对各层内的电荷分布产生重要影响。纳米线中各原子的电荷转移量与该原子在表层内的位置相关。纳米线的尺寸和表层内原子排列结构对体系的稳定性产生重要影响。     

Pressure controllable phase transition in MoTe2 by the interlayer band occupancy

High pressure can effectively control the phase transition of MoTe₂ in experiment, but the mechanism is still unclear. In this work, we show by first-principles calculations that the phase transition is suppressed and $1T^{\prime }$ phase becomes more stable under high pressure, which originates from the pressure-induced change of the interlayer band occupancies near the Fermi energy. Specifically, the interlayer states of $1T^{\prime }$ phase tend to be fully occupied under high pressure, while they keep partially occupied for the $T_d$ phase. The increase of the band occupancies makes the $1T^{\prime }$ phase more favorable in energy and prevents the structure changing from $1T^{\prime }$ to $T_d$ phase. Moreover, we also analyze the superconductivity under high pressure based on BCS theory by calculating the density of states and phonon spectra. Our results may shed some light on understanding the relationship between the interlayer band occupancy and crystal stability of MoTe₂ under high pressures.     

Insight into room-temperature catalytic oxidation of NO by CrO2(110): A DFT study

The first-principles DFT calculations together with microkinetic analysis reveal the complex catalytic mechanism of low-content NO oxidation on CrO₂(110) at room temperature. It quantitatively makes clear that CrO₂(110) can exhibit considerable activity with the Mars-van-Krevelen mechanism preferred, and the nitrate species serves as the key poisoning species.     

Forbidden arithmetic progressions in permutations of subsets of the integers

Permutations of the positive integers avoiding arithmetic progressions of length 5 were constructed in Davis et al. (1977), implying the existence of permutations of the integers avoiding arithmetic progressions of length 7. We construct a permutation of the integers avoiding arithmetic progressions of length 6. We also prove a lower bound of $\frac{1}{2}$ on the lower density of subsets of positive integers that can be permuted to avoid arithmetic progressions of length 4, sharpening the lower bound of $\frac{1}{3}$ from LeSaulnier and Vijay (2011).     

卟啉基非金属纳米片用于可见光光催化制氢

本文基于密度泛函理论预测了一种用于可见光范围光催化制氢的新型二维非金属纳米材料，该材料可以由HTAP分子脱氢聚合得到，具有良好的结构稳定性，且带隙为2.12 eV，可以实现可见光区域的光捕获. 材料的带边能级位置恰好包裹水的氧化还原电位，有利于实现全光解水. 电子的迁移率略高于空穴的迁移率，有利于光生载流子的分离. 光生电子可以提供足够的驱动力使得析氢反应自发进行.     

Red shifting of absorption maxima of phenothiazine based dyes by incorporating electron-deficient thiadiazole derivatives as π-spacer

This study was carried out to design phenothiazine based dyes by incorporating electron-deficient thiadiazole derivatives as π-spacer. Density functional theory and time-dependent density functional theory calculations of the geometries, electronic structures and absorption spectra of the dyes before and after binding to titanium oxide were carried out. Effects of the electron-deficient units on the spectra and electrochemical properties have been investigated. Compared with the reference compound CS1A, Dyes 1–4 display remarkably enhanced spectral responses in the red portion of the solar spectrum. The newly designed dyes demonstrate desirable energetic and spectroscopic parameters, and may lead to efficient metal-free organic dye sensitizers for DSSCs.